|Status||Compulsory/Courses of Limited Choice|
|Level and type||Undergraduate Studies, Academic|
|Field of study||Electronics and Telecommunications|
|Academic staff||Sergejs Tjukovs|
|Credit points||3.0 (4.5 ECTS)|
Electron devices as two and four terminal devices, their current-voltage characteristics. Small signal parameters of two and four terminal devices and corresponding equivalent circuits. Electron energy spectrum of solids, their division in metals, dielectrics and semiconductors. Intrinsic semiconductors and semiconductors with impurities. Electron statistics in semiconductors. P-n junction, its equilibrium and non-equilibrium properties. Heterojunction and contact metal-semiconductor. Rectifier, p-i-n, high frequency, pulse, tunnel, reverse, Zener, variable capacitance and Schottky diodes. Bipolar junction transistors, thyristors, field effect transistors and charge coupled devices. Structure, operation principles, current-voltage characteristics, parameters, mathematical models, advantages and drawbacks of devices considered. Influence of temperature on operation of electron devices..
Goals and objectives
of the course in terms
of competences and skills
|To give knowledge about widely used semiconductor devices, their structure, operation principles, circuit diagrams, current-voltage characteristics and parameters. To develop ability to choose the most appropriate device for the application in question. On the basis of device properties in different circuit diagrams students should be able to choose the necessary circuit diagram and know how to switch the device correctly in the circuit. They must be able to determine whether the device is operational or out of order.|
Are competent about small signal parameters of semiconductor devices, understand their meaning and their approximate value range. Understand which power supply source (current or voltage) must be used in order to measure the corresponding parameter. - Defence of laboratory work reports and exam.
Have knowledge about current-voltage characteristics of two and four terminal devices in different circuit diagrams. - Defence of laboratory work reports and exam.
Are competent in fundamentals of semiconductor physics, understand equilibrium and non-equilibrium properties of p-n junction and contact metal- semiconductor. - Exam.
Understand principles of operation of different semiconductor devices, understand how they must be correctly switched into circuit using appropriate power supply source. Have general understanding about the operation velocity of semiconductor devices. - Defence of laboratory work reports and exam.
Have knowledge about advantages and drawbacks of different semiconductor devices and how the temperature affects their operation. Are able to determine whether or not the semiconductor devices is operational. - Defence of laboratory work reports and exam.
Have knowledge about equivalent circuits and simplest mathematical models of semiconductor devices. - Exam.
Know the designations of semiconductor devices in electrical circuits. - Defence of laboratory work reports and exam.
|Course prerequisites||RRE102 Electricity and Magnetism|